@epochtest7
actief 7 uren, 41 minuten geleden
Ultimately, it was demonstrated that the unintentional In incorporation in GaN barriers was induced by the evaporation of predeposited In-rich particles during low-temperature growth of GaInN wells. Such residual In contamination was sufficiently inhibited by inserting low Al fraction (∼6%) AlGaN spacers after each GaInN well. During the g […] Bekijken
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Gaines Fabricius heeft een update geplaatst 7 uren, 41 minuten geleden
Ultimately, it was demonstrated that the unintentional In incorporation in GaN barriers was induced by the evaporation of predeposited In-rich particles during low-temperature growth of GaInN wells. Such residual In contamination was sufficiently inhibited by inserting low Al fraction (∼6%) AlGaN spacers after each GaInN well. During the growth o…[Lees meer]
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Gaines Fabricius is geregistreerd lid geworden 8 uren geleden
